? semiconductor components industries, llc, 2009 december, 2009 ? rev. 5 1 publication order number: NCV8440/d NCV8440 protected power mosfet 2.6 a, 52 v, n ? channel, logic level, clamped mosfet w/ esd protection benefits ? high energy capability for inductive loads ? low switching noise generation features ? diode clamp between gate and source ? esd protection ? hbm 5000 v ? active over ? voltage gate to drain clamp ? scalable to lower or higher r ds(on) ? internal series gate resistance ? these are pb ? free devices applications ? automotive and industrial markets: solenoid drivers, lamp drivers, small motor drivers ? ncv prefix for automotive and other applications requiring site and control changes gate (pin 1) overvoltage protection esd protection http://onsemi.com sot ? 223 case 318e style 3 drain gate drain source ayw f9n05 a = assembly location y = year w = work week = pb ? free package 123 4 v dss (clamped) r ds(on) typ i d max 52 v 95 m @ 10 v 2.6 a source (pin 3) drain (pins 2, 4) (note: microdot may be in either location) 1 = gate 2 = drain 3 = source marking diagram device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NCV8440stt1g sot ? 223 (pb ? free) 1000/tape & reel NCV8440stt3g sot ? 223 (pb ? free) 4000/tape & reel
NCV8440 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage internally clamped v dss 52 ? 59 v gate ? to ? source voltage ? continuous v gs 15 v drain current ? continuous @ t a = 25 c ? single pulse (t p = 10 s) (note 1) i d i dm 2.6 10 a total power dissipation @ t a = 25 c (note 1) p d 1.69 w operating and storage temperature range t j , t stg ? 55 to 150 c single pulse drain ? to ? source avalanche energy (v dd = 50 v, i d(pk) = 1.17 a, v gs = 10 v, l = 160 mh, r g = 25 ) e as 110 mj load dump voltage (v gs = 0 and 10 v, r i = 2.0 , r l = 9.0 , td = 400 ms) v ld 60 v thermal resistance, junction ? to ? ambient (note 1) junction ? to ? ambient (note 2) r ja r ja 74 169 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. when surface mounted to a fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to a fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
NCV8440 http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 3) (v gs = 0 v, i d = 1.0 ma, t j = 25 c) (v gs = 0 v, i d = 1.0 ma, t j = ? 40 c to 125 c) (note 4) temperature coefficient (negative) v (br)dss 52 50.8 55 54 ? 9.3 59 59.5 v v mv/ c zero gate voltage drain current (v ds = 40 v, v gs = 0 v) (v ds = 40 v, v gs = 0 v, t j = 125 c) (note 4) i dss 10 25 a gate ? body leakage current (v gs = 8 v, v ds = 0 v) (v gs = 14 v, v ds = 0 v) i gss 35 10 a on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 100 a) threshold temperature coefficient (negative) v gs(th) 1.1 1.5 ? 4.1 1.9 v mv/ c static drain ? to ? source on ? resistance (note 3) (v gs = 3.5 v, i d = 0.6 a) (v gs = 4.0 v, i d = 1.5 a) (v gs = 10 v, i d = 2.6 a) r ds(on) 135 150 95 180 160 110 m forward transconductance (note 3) (v ds = 15 v, i d = 2.6 a) g fs 3.8 mhos dynamic characteristics input capacitance v ds = 35 v, v gs = 0 v, f = 10 khz c iss 155 pf output capacitance c oss 60 transfer capacitance c rss 25 input capacitance v ds = 25 v, v gs = 0 v, f = 10 khz c iss 170 pf output capacitance c oss 70 transfer capacitance c rss 30 3. pulse test: pulse width 300 s, duty cycle 2%. 4. not subject to production testing. 5. switching characteristics are independent of operating junction temperatures.
NCV8440 http://onsemi.com 4 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic unit max typ min symbol switching characteristics (note 5) turn ? on delay time v gs = 4.5 v, v dd = 40 v, i d = 2.6 a, r d = 15.4 t d(on) 375 ns rise time t r 1525 turn ? off delay time t d(off) 1530 fall time t f 1160 turn ? on delay time v gs = 4.5 v, v dd = 40 v, i d = 1.0 a, r d = 40 t d(on) 325 ns rise time t r 1275 turn ? off delay time t d(off) 1860 fall time t f 1150 turn ? on delay time v gs = 10 v, v dd = 15 v, i d = 2.6 a, r d = 5.8 t d(on) 190 ns rise time t r 710 turn ? off delay time t d(off) 2220 fall time t f 1180 gate charge v gs = 4.5 v, v ds = 40 v, i d = 2.6 a (note 3) q t 4.5 nc q 1 0.9 q 2 2.6 gate charge v gs = 4.5 v, v ds = 15 v, i d = 1.5 a (note 3) q t 3.9 nc q 1 1.0 q 2 1.7 source ? drain diode characteristics forward on ? voltage i s = 2.6 a, v gs = 0 v (note 3) i s = 2.6 a, v gs = 0 v, t j = 125 c v sd 0.81 0.66 1.5 v reverse recovery time i s = 1.5 a, v gs = 0 v, di s /dt = 100 a/ s (note 3) t rr 730 ns t a 200 t b 530 reverse recovery stored charge q rr 6.3 c esd characteristics (note 4) electro ? static discharge capability human body model (hbm) esd 5000 v machine model (mm) 500 3. pulse test: pulse width 300 s, duty cycle 2%. 4. not subject to production testing. 5. switching characteristics are independent of operating junction temperatures.
NCV8440 http://onsemi.com 5 typical performance curves v ds , drain ? to ? source voltage (volts) i d, drain current (amps) v gs , gate ? to ? source voltage (volts) i d, drain current (amps) t j = 25 c t j = ? 40 c 2.4 v 3.4 v 3.6 v 3.8 v v ds 10 v v gs = 10 v t j = 150 c 2.6 v 2.8 v 3 v 3.2 v t j = 25 c v gs , gate ? to ? source voltage (v) i d , drain current (a) r ds(on) ( m ) r ds(on) (m ) ? 40 c 25 c 150 c ? 40 c, v gs = 5 v ? 40 c, v gs = 10 v 25 c, v gs = 5 v 25 c, v gs = 10 v 150 c, v gs = 5 v 50 100 150 200 250 300 350 345678910 50 100 150 200 250 300 13579 150 c, v gs = 10 v i d = 2 a 0 2 4 6 8 10 012345 4 v 5 v 0 2 4 6 8 10 1 1.5 2 2.5 3 4 3.5 246810 figure 1. single pulse maximum switch ? off current vs. load inductance l, load inductance (mh) 100 10 1 0.1 1 10 il max , max switch ? off current (a) 150 c 100 c 25 c figure 2. single pulse maximum switching energy vs. load inductance l, load inductance (mh) 100 10 1 0.1 10 100 e max , max switching energy (mj) 150 c 100 c 25 c figure 3. on ? state output characteristics figure 4. transfer characteristics figure 5. r ds ( on ) vs. gate ? source voltage figure 6. r ds(on) vs. drain current
NCV8440 http://onsemi.com 6 typical performance curves v sd , source ? to ? drain voltage (v) 1 0.9 0.8 0.7 0.6 0.5 0 2 4 6 8 10 i s , source current (a) ? 40 c 25 c 150 c v ds , drain ? to ? source voltage (v) 40 35 30 25 20 15 10 0.001 0.01 0.1 1 10 100 i dss ( a) 25 c 100 c 150 c v ds = 0 v v gs = 0 v 0 10 10 300 200 100 0 35 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 01 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = 2.6 a t j = 25 c 500 3 2 3 q gd q gs 5 400 5 v gs v ds 15 25 5 4 q t 20 c rss c iss 25 30 v ds , drain ? to ? source voltage (volts) 40 10 0 20 30 50 v gs v ds 1000 v gs = 0 v 50 45 figure 7. normalized r ds(on) vs. temperature figure 8. normalized threshold voltage vs. temperature t j , junction temperature ( c) 120 100 80 40 20 0 ? 20 ? 40 0.50 0.75 1.00 1.25 1.50 1.75 2.00 normalized r ds(on) 60 140 v gs = 5 v v gs = 10 v t j , junction temperature ( c) 140 100 60 40 20 0 ? 20 ? 40 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized v gs(th) (v) 80 120 i d = 2 a i d = 100 a, v ds = v gs figure 9. drain ? to ? source leakage current figure 10. source ? drain diode forward characteristics figure 11. capacitance variation figure 12. gate ? to ? source voltage vs. total gate charge
NCV8440 http://onsemi.com 7 typical performance curves r g ( ) 10,000 1000 100 10 1 100 1000 10,000 time (ns) 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse time (sec) r ja 788 mm 2 c /w v dd = 40 v v dd = 15 v t d(on) t d(off) t f t r 0.000001 single pulse 50% duty cycle 20% 10% 5% 2% 1% t d(on) figure 13. resistive load switching time vs. gate ? source voltage figure 14. resistive load switching time vs. gate resistance (v gs = 5 v, i d = 2.6 a) v gs (v) 10 9 8 7 6 5 4 0 500 1000 1500 2000 time (ns) t d(off) t f t r r g ( ) 1000 100 10 1 100 1000 10,000 time (ns) 10,000 2500 3000 v dd = 40 v v dd = 15 v i d = 2.6 a r g = 0 v dd = 40 v v dd = 15 v t d(on) t d(off) t f t r figure 15. resistive load switching time vs. gate resistance (v gs = 10 v, i d = 2.6 a) copper heat spreader area (mm 2 ) r ja ( c/w) pcb cu thickness, 1.0 oz 50 60 70 80 90 100 110 150 200 250 300 350 400 450 500 figure 16. r ja vs. copper area figure 17. transient thermal resistance 0 50 100 pcb cu thickness, 2.0 oz
NCV8440 http://onsemi.com 8 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue l a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 style 3: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NCV8440/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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